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TANTALUM& NIOBIUM

Tantalum& Niobium
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Tantalum Wire

Attribute:
Product properties:
1. Electrical properties
LC:≤0.10µA/cm2
Formation condition:
Formation liquid: 0.1%H3PO4
Formation temperature: 90±2
Density of the frmation Current: 5mA/cm2
Formation voltage/time: 225V/30min

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Parameter:  

Spec. diameter tolerance allowed

Specification mm Diameter tolerance allowed mm
0.10mm~0.15mm ±0.005
>0.15mm~0.30mm ±0.006
>0.30mm ±0.007

          

Mechanical properties

Product condition Tensile strength Mpa Elongation %
Annealled 300~600 10~30
Half annealed >600~1000 <5
Unannealled >1000 <5

Product Details
Tantalum wire is a slender refractory metal wire processed from high-purity tantalum ingots through multiple drawing, annealing and surface treatment procedures. It inherits the core advantages of tantalum metal: ultra-high melting point, exceptional corrosion resistance against most strong acids, outstanding ductility and stable high-temperature performance. The product features uniform wire diameter, smooth surface, consistent internal grain structure and low impurity content. It boasts excellent tensile strength, good weldability and stable electrical conductivity under high vacuum and high-temperature environments.
Tantalum wire is the core raw material for manufacturing tantalum electrolytic capacitors, which are widely applied in consumer electronics, communication equipment, automotive electronics and aerospace electronic components. It is also used for vacuum heating elements, chemical corrosion-resistant wire electrodes, medical suture and implant accessories, high-temperature furnace filament and electronic evaporation coating materials. We supply tantalum wire with purity from 99.9% to 99.99%, various diameter ranges and customized surface states such as bright polished and matte annealed surface to match different production and lab usage standards.

Applications:
Product properties:
1. Electrical properties
LC:≤0.10µA/cm2
Formation condition:
Formation liquid: 0.1%H3PO4
Formation temperature: 90±2
Density of the frmation Current: 5mA/cm2
Formation voltage/time: 225V/30min

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